| 摘要 |
PROBLEM TO BE SOLVED: To improve integration of a semiconductor device with a ferroelectric memory by laminating a ferroelectric memory region not effected by a leakage current above a logic circuit region, and by increasing the integration of the memory without malfunctions. SOLUTION: This semiconductor device is equipped with a semiconductor substrate 300, where a logic circuit region having a bit line drive transistor is formed, an interconnection wiring that is formed on the logic circuit region for electrically connecting to the bit line drive transistor, a bit line 330 formed above the interconnection wiring for electrically connecting to the interconnection wiring, a silicon film 350 that is formed above the bit line for limiting a cell formation region, and a capacitor 380 formed on the silicon film, a transistor region composed of gate, source, and drain electrodes 368, 362, and 364, and the transistor for electrically connecting to the source electrode.
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