| 摘要 |
<p>PROBLEM TO BE SOLVED: To control the amount of catalyst elements to trace amounts. SOLUTION: An a-Si film 3 is formed on a glass substrate 1 and nickel 5 which are used as catalyst elements are introduced in the film 3. The surface of the film 3 is oxidized into a thin film and the high-concentration nickels are moved on and in the film of the formed thin film oxide film 4. After the film 4 being existed with a large amount of the nickel 5 is removed, a the film 3 is heat-treated to perform a crystallization of the film 3. After phosphorus 8 is doped to the region other than the region which is used as an active region, of the film 3, a heating treatment is performed and the nickel 5 diffused in a crystalline silicon film 3a, are drawn into phosphorus-doped crystalline silicon regions 3b. A channel region is formed using the film 3a, obtained in such a manner. Thus, by removing a region of one part of the surface of the film 3, trance amounts of the nickel 5 only of a component introduced in the film 3 across the removed region are left in the film 3 and the amount of the nickel 5, which are introduced in the film 3, is controlled to trace amounts.</p> |
