发明名称 |
Poly gate CD passivation for metrology control |
摘要 |
Various methods of fabricating gate structures, such as gates and gate stacks are provided. In one aspect, a method of fabricating a gate electrode on a substrate is provided that includes depositing a polycrystalline silicon film on the substrate and etching the polycrystalline film into a desired shape with a first sidewall and a second and opposite sidewall. A passivating oxide film is formed with a preselected thickness on the first and second sidewalls by oxidizing the silicon structure with a heated aqueous solution of ammonium hydroxide and hydrogen peroxide. Gate electrode formation with an oxide coating film of known thickness is provided. Linewidth metrology accuracy may be improved.
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申请公布号 |
US6261936(B1) |
申请公布日期 |
2001.07.17 |
申请号 |
US20000589378 |
申请日期 |
2000.06.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WRIGHT MARILYN I.;WRISTERS DERICK J.;CHEEK JON D. |
分类号 |
H01L21/28;H01L21/321;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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