发明名称 |
INTERCONNECTION STRUCTURE WITH INSULATION COMPRISING CAVITIES |
摘要 |
The invention concerns a method for making a Damascene type interconnection structure on a semiconductor device, comprising the following steps: forming a first level of conductors in a first layer on electrical insulation and a second level of conductors in a second layer of electrical insulation, the first level conductors being spaced apart to enable, in a subsequent step, the formation of cavities between the first level conductors; eliminating the second electrical insulation level; eliminating at least partially the first electrical insulation layer to eliminate the parts of the first layer corresponding to the cavities to be formed; depositing on the resulting structure a material with low permittivity, said deposit not filling up the space between the first level conductors which have been arranged spaced apart to enable the formation of cavities. |
申请公布号 |
WO0150524(A1) |
申请公布日期 |
2001.07.12 |
申请号 |
WO2000FR03713 |
申请日期 |
2000.12.28 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;STMICROELECTRONICS SA;DEMOLLIENS, OLIVIER;BERRUYER, PASCALE;TROUILLER, YORICK;MORAND, YVES |
发明人 |
DEMOLLIENS, OLIVIER;BERRUYER, PASCALE;TROUILLER, YORICK;MORAND, YVES |
分类号 |
H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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