| 摘要 |
PURPOSE: An X-ray image sensing device and a manufacturing method of the same are provided to increase production yield by manufacturing a device with only eight mask processes. CONSTITUTION: A switching region and a pixel region are definite on a plate. An active layer(253) is formed in the switching region on the plate, and consists of a gate electrode(202), an insulation film(250), a purity amorphous silicon(252a) and an impurity amorphous silicon(254a). A thin film transistor has a source electrode(212) and a drain electrode(214). An earthing wiring(218) is formed in a part of the pixel region, and consists of a layer structure of an insulation film(250), a purity amorphous silicon(252b) and an impurity amorphous silicon(254b) at the bottom. A first protection film(256) covers the whole surface of the thin film transistor of the switching region, the plate of the pixel region and the earthing wiring(218), and has a contact hole in which the drain electrode(214) and a part of the earthing wiring(218) are each exposed. A capacity electrode(226) is formed with a first transparent electrode, and contacts with the earthing wiring(218) and a drain subordinate electrode(215) which contacts with the drain electrode(214) through the contact hole formed in the first protection film(256). A second protection film(258) covers the upper part of the first transparent electrode and the whole surface of the plate, and has a contact hole in which a part of the drain subordinate electrode(215) is exposed. A pixel electrode(228) is formed with a second transparent electrode on the second protection film(258), and contacts with the drain subordinate electrode(215).
|
