SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor wafer and a method for manufacturing the same are provided to prevent a damage of a dummy region by forming a moat pattern on an active region and the dummy region of a semiconductor substrate. CONSTITUTION: A moat pattern is formed on an active region and a dummy region of a semiconductor substrate(100) by using an STI(Shallow Trench Isolation) method. The moat pattern is used as an isolation pattern for isolating devices. The moat pattern is formed with an insulating material such as TEOS(TetraEthOxySilane). A gate insulating layer(400) is formed on the semiconductor substrate(100). A gate electrode(510) is formed on the gate insulating layer(400).