| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a low-cost field-emission-type electron source that has little reduction in the electron-emission efficiency due to scattering of electrons, and is excellent stability through passage of time, and to provide its manufactur ing method. SOLUTION: On the main surface side of an n-type silicon substrate 1 that is a conductive substrate, an intense-field drift layer 6 comprising oxidized porous polycrystalline silicon is formed, and on the intense-field drift layer 6, a surface electrode 7 that is a conductive film is arranged. The surface electrode 7 is made forming a first layer comprising Cr on the intense-field drift layer 6, laminating a second layer comprising Au on the first layer and after that by conducting alloying treatment, and it has high adhesion to the intense- field drift layer 6 and high stability through passage of time. Furthermore, in the surface electrode 7, the state density near the energy of is electron emission lower than the state density of Cr simple substance, electron scattering is low and also the reduction in the electron-emission efficiency due to electron scattering is low.</p> |
