| 摘要 |
A semiconductor based image sensor having a plurality of pixels formed on a surface of the image sensor, such that each of the pixels has a photodetector configured to collect majority carriers created from incident light; a region within each of the photodetectors that is narrowed, the narrowed region of the photodetector being electrically coupled to a drain for the majority carriers; a reset means; a transistor for converting photo-charge to voltage or current. The narrowed region provides a path for excess photoelectrons in the photodetector to the drain. The narrow regions path to the drain, in the preferred embodiment, is that of the drain used for the adjacent transistor.
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