METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent GILD(Gate Induced Drain Leakage) phenomenon by using a selective epitaxial growth method. CONSTITUTION: An isolation layer(13) is formed on a semiconductor substrate(11). A gate insulating layer is formed on the whole structure. A stack structure of a gate electrode(15) and a mask insulating layer pattern(17) is formed thereon. A MOS FET(MOS Field Effect Transistor) is formed on a sidewall of the stack structure. A pad polysilicon layer is formed on whole structure. A photoresist pattern is formed on the pad polysilicon layer. A pad polysilicon layer pattern is formed by etching the pad polysilicon layer. A contact plug(24) is formed by using an epitaxial growth method.