METHOD FOR MANUFACTURING MOS TRANSISTOR OF ELEVATED SOURCE/DRAIN STRUCTURE

摘要

PURPOSE: A method for manufacturing a MOS transistor of an elevated source/drain structure is provided to prevent degradation of a device due to a short-channel effect by forming a MOS transistor of an elevated source/drain structure with a shallow junction. CONSTITUTION: A gate structure including a mask insulating layer(34) and a gate sidewall spacer(35) is formed on a silicon substrate(30). The first selective epitaxial silicon layer(36) is grown on the silicon substrate(30). The second selective epitaxial silicon layer(37) is grown on the first selective epitaxial silicon layer(36). A boron-counter doping process is performed on the second selective epitaxial silicon layer(37). The dopant formed on the second selective epitaxial layer(37) is diffused by performing a thermal process.