| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device having a passivation structure using titanium as a metal cover layer is provided to simplify a manufacturing process and to shorten an interval for a manufacturing process, by performing an in-situ process in an apparatus for etching an insulation layer, and by performing a cleaning process necessary for an etching process. CONSTITUTION: A metal interconnection is formed on a lower layer(20) including a ferroelectric capacitor. A lower oxide layer, a metal cover Ti layer(23), an upper oxide layer and a silicon nitride layer(25) are sequentially formed on the entire structure having the metal interconnection. The silicon nitride layer and the upper oxide layer in a pad contact region are selectively etched in an apparatus for etching an insulation layer. The exposed metal cover Ti layer is transformed to a TiOx layer. The TiOx layer is selectively etched in the apparatus for etching the insulation layer. The exposed lower oxide layer is selectively etched in the apparatus for etching the insulation layer.
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