| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the reliability of a device by preventing degradation of a metal line generated by a post-thermal process. CONSTITUTION: A metal line pattern(12) is formed on a semiconductor substrate(10). A photoresist is applied on a whole face of the metal line pattern(12). A photoresist pattern is formed thereon. The first insulating layer(20') is formed on a space between the photoresist patterns. The photoresist pattern is removed therefrom. The second insulating layer(22') is buried on a space from which the photoresist pattern is removed. Surfaces of the first and the second insulating layers(20',22') are flattened by polishing the first and the second insulating layers(20',22').
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