| 摘要 |
PURPOSE: A forming method of passivation film is provided to ensure excellent barrier features and deposition features by forming a passivation film with a layered structure of a silicon oxinitride film excellent in UV ray transmission and a silicon nitride film excellent in barrier features against the environment. CONSTITUTION: A substrate(21) with a lower wiring pattern(22) is loaded to a plasma enhanced chemical mechanical deposition equipment. A deposition gas is flown into the equipment, and a high-frequency power is applied to a reaction chamber and a semiconductor substrate to carry out the first deposition process to form the first passivation film on the whole structure including the lower wiring pattern(22). The amount of a reactant gas is adjusted, and the second deposition process is performed form the second passivation film(24) on the first passivation film(23).
|
