METHOD FOR FORMING METAL LINE OF FLASH MEMORY DEVICE

摘要

PURPOSE: A method for forming the metal line of a flash memory device is provided to prevent the hydrogen constituent from permeating into the inside of cell by forming a nitride film on the both sides of the metal line. CONSTITUTION: An interlayer film(22) is formed on a substrate(21), and a barrier metal layer(23), a metal line(24) and an anti-reflection layer(22) are formed and patterned thereon in turns, so that a metal line pattern is formed. By depositing nitride material on the whole structure and performing the blanket etching, a spacer nitride film(26) is formed on both sides of the metal line pattern. An inter-metal oxide film(27) is formed on the whole structure, and a SOG(sea of gate) film(28) is formed thereon. The flattening process is performed.