METHOD FOR MANUFACTURING TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to improve a characteristic of hot carrier injection by a transistor of a semiconductor device with a DLDD(Double Lightly Doped Drain) junction structure. CONSTITUTION: A gate oxide layer(20) and a gate(30) are formed on a semiconductor substrate(10). The first LDD(Lightly Doped Drain) region(40) is formed at a lower portion of the gate oxide layer(20). An oxide layer is deposited on an upper portion of the whole structure. The second LDD region(60) is formed by performing the second slope ion implantation process. A nitride layer is deposited on the whole structure. The nitride layer and the oxide layer are etched and a double spacer is formed at both sidewalls of the gate(30) by performing an etching-back process. A junction portion(80) is formed by performing a source/drain ion implantation process.