COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A complementary metal oxide semiconductor(CMOS) image sensor and a method for manufacturing the same are to increase an operation speed thereof by selectively applying silicide onto a complementary metal oxide device. CONSTITUTION: A gate electrode(16) of a transistor is formed on a semiconductor layer of a CMOS device region. A photodiode is formed under a surface of the semiconductor layer in a region of a light receiving element. A low concentration impurity conjunction is formed on the CMOS device region, and an anti-reflective layer(21a) is formed on the entire surface of the substrate. The light receiving element region is covered to form a mask for opening the CMOS device region. The anti-reflective layer is etched to form an anti-reflective layer pattern on the semiconductor layer of the photodiode, thereby forming a spacer(21b) on a side wall of the gate electrode. A high concentration impurity conjunction is formed using the mask and the spacer as an ion implanting mask.