| 摘要 |
PURPOSE: A code addressable memory cell is to increase a coupling ratio of a floating gate and a control gate, thereby stably operating the code addressable memory cell. CONSTITUTION: A field oxide film is formed on a substrate(41) to define an active region. A floating gate(44) is formed on the substrate, and is electrically insulated from the substrate by a tunnel oxide film(43). The float gate is extended onto the adjacent active regions and the field oxide film between the active regions, thereby commonly holding the active regions. A dielectric layer(45) and a control gate(46) are formed on the floating gate. After a source region(S) and a drain region(D) are formed on the first and second active regions, respectively, an interlayer dielectric(40) is formed on the entire surface of the substrate, and is etched to expose the source and drain regions, thereby forming a contact hole. The contact hole is buried by a conductive material.
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