发明名称 METHOD FOR FORMING MULTILAYER SEMICONDUCTOR STRUCTURE, METHOD OF ALIGNING LITHOGRAPHY MASK AND SEMICONDUCTOR STRUCTURE
摘要 <p>PURPOSE: A method for forming multilayer semiconductor structure and a method of aligning lithography mask is provided to use with a SCALPEL tool. CONSTITUTION: The method is to form a multilayer semiconductor structure for alignment with a lithography mask or for use with a SCALPEL tool. This invention is suitable for a submicron CMOS technology and useful because of the use of an electron beam source for both alignment and exposure of a lithography mask on a semiconductor wafer.</p>
申请公布号 KR20010062156(A) 申请公布日期 2001.07.07
申请号 KR20000073674 申请日期 2000.12.06
申请人 LUCENT TECHNOLOGIES INC. 发明人 BOULIN DAVID M.;FARROW REGINALD C.;KIZILYALLI ISIK C.;LAYADI NACE;MKRTCHYAN MASIS
分类号 G03F7/20;G03F9/00;H01J37/304;H01J37/305;H01L21/027;H01L23/544;(IPC1-7):H01L21/027 主分类号 G03F7/20
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