发明名称 |
METHOD FOR FORMING MULTILAYER SEMICONDUCTOR STRUCTURE, METHOD OF ALIGNING LITHOGRAPHY MASK AND SEMICONDUCTOR STRUCTURE |
摘要 |
<p>PURPOSE: A method for forming multilayer semiconductor structure and a method of aligning lithography mask is provided to use with a SCALPEL tool. CONSTITUTION: The method is to form a multilayer semiconductor structure for alignment with a lithography mask or for use with a SCALPEL tool. This invention is suitable for a submicron CMOS technology and useful because of the use of an electron beam source for both alignment and exposure of a lithography mask on a semiconductor wafer.</p> |
申请公布号 |
KR20010062156(A) |
申请公布日期 |
2001.07.07 |
申请号 |
KR20000073674 |
申请日期 |
2000.12.06 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
BOULIN DAVID M.;FARROW REGINALD C.;KIZILYALLI ISIK C.;LAYADI NACE;MKRTCHYAN MASIS |
分类号 |
G03F7/20;G03F9/00;H01J37/304;H01J37/305;H01L21/027;H01L23/544;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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