| 摘要 |
PURPOSE: A method of improving equality of ashing ratio in photoresistor ashing processing device is provided to compensate for ununiformity of removing speed for a photoresist better. CONSTITUTION: The plasma ashing device includes a plasma chamber(51), a vacuum system(54) for adjusting the pressure in the chamber(51), a gas distribution system(53) for supplying treatment gas to the plasma chamber(51), a heater and temperature adjustor(55) for adjusting the plasma chamber(51), a plasma source(510) located in the plasma chamber(51), an RF power supplier(52) located in the plasma chamber(51), and a grid pate assembly(512) for adjusting a plasma gas to be flown uniformly on an object wafer and adjust with variable to be neutralized.
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