| 摘要 |
PURPOSE: Provided is a chemically amplified resist material sensitive to a high-energy ray and excellent in sensitivity, resolution and plasma etching resistance at a wavelength of less than 200 nm, particularly less than 170 nm. CONSTITUTION: The resist material comprises a polymer compound containing, a fluorinated acrylic derivative represented by general formula(1) as a recurring unit in its main chain. In the formula, R1, R2 and R3 are each a hydrogen or fluorine atom, or a 1-20C linear, branched or cyclic alkyl or fluorinated alkyl group, and at least one of R1, R2 and R3 contains a fluorine atom; and R4 is an acid- labile group. The resist material has low absorption at the exposure wavelengths of an F2 excimer laser in particular due to its characteristics and can easily form a fine pattern perpendicular to a substrate, and therefore is suitable as a fine-pattern forming material for manufacturing an ultra LSI.
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