METHOD OF MANUFACTURING STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a storage electrode is provided to enable a noble metal to have a vertical profile by annealing the noble metal in a reduction atmosphere and growing a grain so as to have a brittle property. CONSTITUTION: An interlayer insulation film having a storage electrode plug is formed on a semiconductor substrate. A platinum film is formed on an entire surface of a resultant structure, and a grain is grown by annealing the platinum film. A thin film for a hard mask is formed on the platinum film. A photoresist film is formed on a portion of the thin film where a storage electrode is to be formed. A thin film pattern and the storage electrode are formed by etching the thin film and the platinum film using the photoresist film pattern as an etch mask. The thin film pattern and the photoresist film pattern are removed and a fence formed at the etch process for forming the storage electrode is removed.