METHOD FOR MANUFACTURING BARRIER LAYER IN METAL INTERCONNECTION

摘要

PURPOSE: A method for manufacturing a barrier layer in a metal interconnection is provided to prevent an overhang problem caused by the increase of the thickness of a barrier layer, by using an amorphous layer such as Ta-Si layer or Ta-Si-N layer as the barrier layer so that an additional heat treatment process is not needed. CONSTITUTION: An interlayer dielectric(140) having an opening exposing a contact region(120) is formed on a semiconductor substrate(100) including the contact region. An amorphous barrier layer(180) is formed at least on the contact region. A metal material is formed on the entire resultant structure having the barrier layer to completely fill the opening.