| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can restrain deterioration of reliability of a connection hole even if misregistration is generated between the connection hole and a wiring when the connection hole is formed in a layer insulation film on a wiring. SOLUTION: The manufacturing method of a semiconductor device has a process for forming an amorphous Si film on a first layer insulation film 1, a process for forming a second Al alloy wiring 3a on the amorphous Si film 2a, a process for forming a sidewall 4a in a side wall of the wiring 3a, a process for etching an amorphous Si film by using the sidewall 4a and the wiring 3a as a mask, a process for forming a second layer insulation film 5 on the first insulation film 1, the sidewall 4a and the wiring 3a, and a process for forming a via hole 5a by etching the second layer insulation film 5 by using the wiring 3a and the amorphous Si film 2a as an etching stopper.
|
