| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve a cell refresh characteristic of the capacitor by enlarging a surface area of a cylinder of the capacitor. CONSTITUTION: A BPSG layer(44), an etch stopping layer(45) and a TEOS layer(46) are sequentially formed on a lower structure of a semiconductor substrate. A contact(47) is formed by performing an exposure process and a developing process using the TEOS layer(46), the etch stopping layer(45) and the BPSG layer(44). After forming a polycrystalline silicon layer for filling the contact, an etch back process is carried out. Then, the polycrystalline silicon layer is selectively etched so as to form a plug(48). An oxide layer is formed on the surface of the structure. A core oxide layer pattern is formed by selectively removing the oxide layer. Then, an internal polycrystalline silicon layer(50) is formed.
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