| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can reduce a layout area of the device. SOLUTION: A semiconductor memory device (DRAM Macro) is provided with a word line driver SWD1 constituted as a module to be a basic unit of a layout structure, a memory cell array MCA1 constituted as the same module, and a sense amplifier array SAA1 constituted as the same module. A capacitor CAPA1 constituted as the same module is provided with more than two capacitor arrays CAPA1 to CAPAn and a power source voltage Vpp for driving the word line driver SWD1 is elevated, and has a structure in which both the terminals of the capacitor arrays CAPA1 to CAPAn of which more than two are arrayed are connected. |
