发明名称 METHOD FOR MANUFACTURING PLASMA REACTIVE REGION STRUCTURE, PLASMA REACTIVE REGION STRUCTURE, AND PLASMA PROCESSOR USING THE STRUCTURE
摘要 PROBLEM TO BE SOLVED: To realize a durable structure such as a plasma generating container or plasma reactor used in a plasma etching system or a plasma reactive region of a CVD system by solving a problem in productivity and maintenance with a very short lifetime of quartz glass and that the structure has been eroded by fluoric gas. SOLUTION: A protective film of dense and rigid alumina or the like is formed over quartz glass which is a preprocessing reactive region structure by the atomic layer chemical vapor deposition method or the CVD method. The protective film is constituted of at least one or more substances. A plasma reactive region structure used in a plasma reactive region of a plasma etching system or a CVD system, which used to be eroded by a fluoric gas, turns nonerosive. Therefore, it proves to improve durability, to increase productivity, and to be effective in cost and maintenance.
申请公布号 JP2001185533(A) 申请公布日期 2001.07.06
申请号 JP19990363854 申请日期 1999.12.22
申请人 CHEMITORONICS CO LTD 发明人 HONMA KOJI
分类号 H01L21/302;C23C16/511;C23F4/00;H01L21/3065;H01L21/31;H05H1/46 主分类号 H01L21/302
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