| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to improve the reliability of a semiconductor device by preventing damages of a cylindrical storage electrode and a metastable polysilicon. CONSTITUTION: A lower insulating layer(11) having a storage electrode contact plug(13) is formed on an upper portion of a semiconductor substrate. A cylindrical storage electrode connected with the storage electrode contact plug(13) is formed by using a polysilicon(17). The polysilicon(17) is formed by performing deposition processes of three steps. A metastable polysilicon layer(19) is formed on a surface of the cylindrical storage electrode.
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