| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device by using a chemical mechanical polishing(CMP) method is provided to increase uniformity in a wafer after a polishing process and to shorten the entire manufacturing time, by preventing dishing of a metal interconnection layer and erosion of an oxide layer. CONSTITUTION: A polishing target layer is formed on a polishing stop layer formed on a semiconductor substrate(1). The polishing target layer is eliminated by the first chemical mechanical polishing(CMP) process while a portion of the polishing target layer is left on the polishing stop layer. Slurry of a lower temperature than that of the first CMP process is supplied while the polishing target layer is polished to expose the polishing stop layer by the second CMP process.
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