METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve an electrical characteristic of a semiconductor device by reducing a contact resistance. CONSTITUTION: A multitude of word line(13) is formed on a semiconductor substrate(11). A protective insulating layer(31) is formed on the semiconductor substrate(11). An interlayer dielectric(16) and a conductive layer(32) are formed on the protective insulating layer(31). A contact hole expectation portion of the conductive layer(32) and the interlayer dielectric(16) are etched. The protective insulating layer(31) of the word lines(13) is etched by using the etched conductive layer(32) and the interlayer dielectric(16) as a mask. A contact hole is formed on the word lines(13) by etching a hard mask layer of the word lines(13). The interlayer dielectric(16) is etched by using the etched conductive layer(32) as a mask. A contact hole is formed on the substrate(11) by etching the protective insulating layer(31).