发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR COMPONENT
摘要 PROBLEM TO BE SOLVED: To prevent the chipping or cracking of a peripheral end face of a semiconductor substrate when processing a wafer thinly. SOLUTION: The wafer 11 is formed with circuits 12 and electrode sections 13. When making semiconductor chips from the wafer 11, first of all, the peripheral end face of the wafer 11 is observed by a microscope to find out small chipping. When the small chipping is actually found, the wafer 11 is cut along the broken line shown in the figure so that a cut part may include the chipping 14. Then, the rear surface of the wafer 11 is polished to make the wafer thin and then the wafer 11 is subject to a surface finish. Finally, the wafer 11 is cut by the circuit 12 into semiconductor chips.
申请公布号 JP2001185518(A) 申请公布日期 2001.07.06
申请号 JP19990366778 申请日期 1999.12.24
申请人 DENSO CORP 发明人 NAKAKUKI KIYOSHI;IIO JUNICHI;KANO FUMIYOSHI
分类号 H01L21/304;H01L21/301;(IPC1-7):H01L21/304 主分类号 H01L21/304
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