| 摘要 |
PURPOSE: A write control circuit of a semiconductor memory is provided to increase a safety of a data write operation by extending a length of an internal data signal through a latch. CONSTITUTION: A write control circuit includes a signal mixing part(10), a control signal generating part(20), a data input buffer part(30), and a driving part(40). The signal mixing part(10) generates an enable signal(WECS) for enabling the data input buffer part(30) according to a write enable signal(WE) and a logic level of a chip selection signal(CS). The control signal generating part(20) receives the enable signal(WECS), and generates a pulse signal(WECSTD) at the time point of finish of the enable signal(WECS). The data input buffer part(30) performs a buffering during the enable signal(WECS) is enabled, and outputs an internal data signal(DATAIN) having a length extended as much as a length of the pulse signal(WECSTD). The driving part(40) receives the internal data signal(DATAIN), and writes data through a bit line of a memory cell(50).
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