BIPOLAR TRANSISTOR WITH UPPER HETEROJUNCTION COLLECTOR AND METHOD FOR MAKING SAME

摘要

The invention concerns a bipolar transistor with upper heterojunction comprising in particular stacked on a substrate: an emitter layer (EM); a base layer (BA), a collector layer (CO). In said transistor, the base-emitter junction surface is of smaller dimension than the base-collector junction surface and the material of the base layer has a lower electric conducting sensitivity to ion implantation than the electric conducting sensitivity of the material of the emitter layer to the same ion implant.