CARBON-CONTAINING ALUMINUM NITRIDE SINTERED COMPACT, AND CERAMIC SUBSTRATE FOR USE IN APPARATUS FOR MANUFACTURING AND INSPECTING SEMICONDUCTOR

摘要

A carbon-containing aluminum nitride sintered compact comprising an aluminum nitride matrix and, incorporated therein, a carbon which has peaks appearing in the vicinity of 1580 cm<-1> and 1355 cm<-1> as measured by the laser Raman spectrometry. The carbon-containing aluminum nitride sintered compact does not suffer from a short circuit due to its satisfactorily high volume resistivity of at least 1 x 10<8> OMEGA • cm in a high temperature region of 200 DEG C or higher (for example, 500 DEG C or so), is excellent in hiding properties, is increased with respect to radiant heat and can secure high accuracy in the measurement by a surface thermometer.