METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to be capable of increasing the uniformity of doping in a polysilicon film for a gate and also maintaining a shallow junction. CONSTITUTION: A method for manufacturing semiconductor devices prepares a semiconductor substrate(1) having device isolation films(2) defining a device formation region. A gate oxide film(3) and a conductive film for a gate are sequentially formed on the semiconductor substrate. The conductive film for gate and gate oxide film are patterned to be a gate electrode shape. A N type low concentration impurity region is formed within the device formation region of the exposed semiconductor substrate. Spacers(6) are formed at both sidewalls of the patterned conductive film for a gate and the gate oxide film. Phosphors(P) is injected into the patterned conductive film for a gate and the device formation region of the exposed semiconductor substrate by a given tilt angle toward a drain region(8) in order to form a gate electrode(4a) and source/drain regions(7,8). Arsenide(As) ions are injected into the gate electrode and the source and drain regions(7,8) to form a shallow junction on the surface of the drain region neighboring to a channel region at the bottom of the gate electrode.