| 摘要 |
PURPOSE: A structure for preventing static electricity of a semiconductor device is provided to determine whether a pin leakage fail occurs in a transistor, by connecting pads to each terminal of a plurality of transistors constituting a circuit for preventing static electricity, and by applying a voltage to the transistor to test through a corresponding pad to perform a test process. CONSTITUTION: An output terminal of the first and second transistors connected between a power supply and the ground is connected to the first pad(1) of an output driving unit wherein the first pad applies a signal to a semiconductor device. An input buffer unit receives an output signal of the output driving unit through a resistor(R). A drain of a n-channel metal-oxide-semiconductor(NMOS) transistor(N1,N2) is connected to an input portion of the input buffer unit, and a gate and a source of the NMOS transistor are connected to the ground. The second pad(2) is connected to the power supply voltage terminal of the first transistor constituting the output driving unit. The third pad(3) is connected to the ground voltage terminal of the second transistor constituting the output driving unit. The fourth pad(4) is connected to the ground voltage terminal of the NMOS transistor connected to the input portion of the input buffer unit. The fifth and sixth pads(5,6) are respectively connected to source and drain terminals of the transistor constituting the input buffer unit.
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