| 摘要 |
PURPOSE: A method for manufacturing a static random access memory(SRAM) cell is to provide an excellent gate insulating characteristic even if the thickness of a gate oxide layer of a drive transistor is thinly formed as compared with a conventional technique, by decreasing the voltage applied to a cell node. CONSTITUTION: The first gate oxide layer for an access transistor, the first gate(53a,53b), the second gate oxide layer for a drive transistor and the second gate are sequentially formed on a semiconductor substrate(50) having a field oxide layer. Impurity regions for a source/drain are formed in the substrate at both sides of the first and second gates of the access transistor and the drive transistor, respectively. An interlayer dielectric is formed on the substrate including the first and second gates. The interlayer dielectric is etched to form a contact hole(57) for a cell node which exposes the impurity regions for the source of the access transistor and the drain of the drive transistor. An undoped polysilicon layer is formed on the interlayer dielectric to contact the impurity region through the contact hole for the cell node. Predetermined impurity ions are implanted into the undoped polysilicon layer. The polysilicon layer is patterned. An insulating layer is formed on the interlayer dielectric including the conductive layer.
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