METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor is provided to prevent a bridge phenomenon, by forming a barrier layer composed of a nitride layer material having an excellent insulating characteristic between adjacent capacitors. CONSTITUTION: An interlayer dielectric is formed on a silicon substrate(1) having bit lines(5). A mask pattern exposing the interlayer dielectric between the bit lines is formed on the interlayer dielectric. The exposed interlayer dielectric is etched. A capacitor plug is formed in the etched interlayer dielectric portion. The first oxide layer having a planarized surface is formed on the capacitor plug and the mask pattern. A predetermined portion of the first oxide layer is etched to form a contact hole confining a capacitor formation region. A barrier layer composed of a nitride layer is formed in the contact hole. The first oxide layer is etched back to form an oxide layer spacer on the sidewall of the barrier layer. A polysilicon layer(15) for a storage node electrode in contact with the capacitor plug is uniformly formed on the resultant structure. The second oxide layer having a planarized surface is formed on the polysilicon layer for the storage node electrode. A predetermined thickness of the second oxide layer, the polysilicon layer for the storage node electrode, the oxide layer spacer and the barrier layer is removed to separate the polysilicon layer for the storage node electrode. The second oxide layer is removed. A dielectric layer(17) and a polysilicon layer(18) for a plate electrode are sequentially formed on the resultant structure.