| 摘要 |
PURPOSE: A method for forming fine pattern using stencil mask is provided to reduce electrical current due to scanned light by dividing transmission area formed on various mask including stencil mask into lattice of regular intervals, to reduce blur phenomenon of pattern and form a precise pattern on the wafer. CONSTITUTION: The method for forming fine pattern comprises the steps of dividing transmission area of mask through which light passes, into lattice of regular intervals and forming pattern on the wafer using the light having predetermined energy. This mask is the stencil mask used in the process of non-optical lithography or the other mask. |
