| 摘要 |
PURPOSE: A method for forming a mask of a semiconductor device is provided to permit reuse of the mask used once without causing environmental pollution. CONSTITUTION: The method includes preparing a quartz substrate(20) having an opaque pattern(21) with a specific transmissivity and already used in a fabrication process of the semiconductor device, then depositing an opaque layer(22) having a lower transmissivity than the opaque pattern(21), then forming a resist layer over the opaque layer(22), then forming a resist pattern by exposing and developing a portion of the resist layer, then etching the opaque layer(22) by using the resist pattern, and then removing the resist pattern. Preferably, the opaque pattern(21) is a phase shift pattern, while the opaque layer(22) is a chromium layer. In addition, the exposed portion of the resist layer is greater in width than a space between the adjacent opaque patterns(21). Moreover, when the opaque layer(22) is etched, the opaque pattern(21) may be also etched.
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