| 摘要 |
PURPOSE: A method for manufacturing semiconductor devices is provided to be capable of preventing generation of voids between devices upon formation of an interlayer insulating film covering the devices. CONSTITUTION: A method for manufacturing semiconductor devices intervenes a gate insulating film on a semiconductor substrate(200) to form respective gate electrodes. A low concentration impurity region of the first conductivity(212) is formed in the semiconductor substrate at the bottom of both sides of each of the gate electrode. The first insulating sidewall(224a) is formed so that it can remain at both sides of each of the gate electrodes. The second insulating sidewall(226a) having an etch selectivity different from the first insulating sidewall is formed in the first insulating sidewall. A high concentration impurity region of the first conductivity(230) and an LDD(212) being source/drain are formed in the semiconductor substrate at the bottom of the gate electrode including the first and second insulating sidewalls. The second insulating sidewall is then removed. An interlayer insulating film is formed on the semiconductor substrate enough to fill between respective gate electrodes including the first insulating sidewall.
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