| 摘要 |
An implementation base (10) is formed of a silicon substrate (11) having a recess (12) on a surface. Wire layers (13) are formed on the silicon substrate (11), continuously extending from the bottom of and via the side of the recess (12) to the top surface. A semiconductor chip (14) is implemented in the recess (12) of the implementation base (10) in a flip-chip manner to configure a functional device unit. |
