发明名称 Process for forming silicon oxide coating on plastic material
摘要 This invention is to provide a three-dimensional plastic vessel of excellent gas-impermeability and a process for forming a film having uniform thickness and high gas-interception to a three-dimensional plastic vessel to produce the vessel. A plastic three-dimensional vessel, having a Tg higher than the coating temperature, excellent in gas-interception, that is coated with a silicon oxide film having a refractive index of 1.4 to 1.5, a thickness of 300 Å to 2000 Å and composition of SiOx (x=1.5 to 2.0) is provided. The process includes coating a silicon oxide film, excellent in gas-impermeability, on the plastic vessel of three-dimensional shape, said plastic being a material that has a Tg higher than the coating temperature of the silicon oxide thin film. A high-frequency electrode is placed on the surface side on which the coating is not formed and the location of the high-frequency electrode is nearly constant in a distance not more than 10 mm from the electrode surface to the vessel surface on which the coating is formed. An electrode for ground connection is placed in the surface side on which the coating is formed and the location of the ground connection electrode is nearly constant in a distance from the electrode surface to the vessel surface, which distance is greater than the distance from the high-frequency electrode surface to the vessel surface on which the coating is formed.The silicon oxide film is coated in a uniform thickness to the surface which faces to the ground connection electrode by introducing the plasma of the silicon oxide produced by CVD process in between the vessel and the ground connection electrode with a discharge has pressure of 0.0005 to 0.05 torr.
申请公布号 US6254983(B1) 申请公布日期 2001.07.03
申请号 US19950575618 申请日期 1995.12.20
申请人 TOYO SEIKAN KAISHA LTD. 发明人 NAMIKI TSUNEHISA
分类号 B65D1/00;B32B9/00;C23C14/04;C23C16/04;C23C16/40;C23C16/42;C23C16/50;(IPC1-7):B32B13/12;B32B27/32;B32B27/36 主分类号 B65D1/00
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