| 摘要 |
PURPOSE: A method for measuring a minor carrier diffusion length of an epitaxial wafer using a surface light voltage is provided to enable to evaluate a reliable epitaxial layer of the epitaxial wafer by minimizing the interference of an external factor using a surface light voltage measurement method. CONSTITUTION: At first, a single crystalline silicon ingot is produced, and a silicon wafer is fabricated by slicing the silicon ingot and polishing one side of the wafer and finally inspecting it. Then, an epitaxial wafer is fabricated by forming an epitaxial layer on an upper part of the silicon wafer using a selective epitaxial growth method. Then, a monochromatic light having a wavelength of 800-950 nm is irradiated onto the epitaxial layer to evaluate the contamination of the epitaxial layer. Then, an excess carrier is generated by the monochromatic light, and a surface light voltage is generated on the surface of the epitaxial wafer by the transport of the excess carrier, and the surface light voltage is measured. And, a diffusion length of the minor carrier is calculated from the variation of the measured surface light voltage according to the variation of a penetration depth of the monochromatic light.
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