| 摘要 |
PURPOSE: An electrode structure of an electron gun for a CRT and a fabricating method of the same are provided to be capable of increasing a brightness point cancel voltage by forming first/second grid electrodes into a capacitor electrode to increase the voltage difference between the two grid electrodes, decreasing the gap between the electrodes and decreasing the thickness of the first grid electrode. CONSTITUTION: A dielectric thin film layer(113) and a first grid electrode thin film layer(114) are sequentially formed under a second grid electrode(112) so that the first/second grid electrodes have a capacitor structure. Three electron beam passage holes(115) are asymmetrically formed interior of the second electrode(112), the dielectric thin film layer(113) and the first grid electrode thin film layer(114). Preferably, the dielectric thin film layer(113) consists of BaTiO3.
|
