发明名称 |
SYSTEM AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a technology for performing plasma processing in-line, while suppressing plasma damages. SOLUTION: At performing plasma processing using a plasma generated at a plasma generating section, a matching circuit is connected with one end of an induction coupling coil at the plasma generating section and having the other end connected to a capacitor. The capacitor serves to reduce the potential difference between a voltage-induced at one end of the coil and a voltage induced at the other end of the coil.
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申请公布号 |
JP2001176858(A) |
申请公布日期 |
2001.06.29 |
申请号 |
JP19990360985 |
申请日期 |
1999.12.20 |
申请人 |
HITACHI LTD;HITACHI INSTRUMENTS SERVICE CO LTD |
发明人 |
TSUNEKAWA SUKEYOSHI;KAWASAKI HIROMICHI;WATANABE KAZUTO;TSUKUNI KAZUYUKI;YOSHIOKA TAKESHI |
分类号 |
H01L21/302;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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