发明名称 SYSTEM AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technology for performing plasma processing in-line, while suppressing plasma damages. SOLUTION: At performing plasma processing using a plasma generated at a plasma generating section, a matching circuit is connected with one end of an induction coupling coil at the plasma generating section and having the other end connected to a capacitor. The capacitor serves to reduce the potential difference between a voltage-induced at one end of the coil and a voltage induced at the other end of the coil.
申请公布号 JP2001176858(A) 申请公布日期 2001.06.29
申请号 JP19990360985 申请日期 1999.12.20
申请人 HITACHI LTD;HITACHI INSTRUMENTS SERVICE CO LTD 发明人 TSUNEKAWA SUKEYOSHI;KAWASAKI HIROMICHI;WATANABE KAZUTO;TSUKUNI KAZUYUKI;YOSHIOKA TAKESHI
分类号 H01L21/302;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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