| 摘要 |
PROBLEM TO BE SOLVED: To materialize highly reliable semiconductor device by suppressing partial ungrowing state for forming stable film, when an insulating film is formed by using TEOS-O3 gas as a source gas on manufacturing a semiconductor device. SOLUTION: An insulating film of tetraethyloxysilane-ozone group is dissolved in an ozone atmosphere at 300 to 400 deg.C, before the film is formed. A contaminant such as KCl generating a causative material, for example KClO3, which turns the insulating film of tetraethyloxysilane-ozone group into ungrowing material is preliminarily removed by means of a material, such as H2O2+NH4 OH and the like. This pretreatment is included in the manufacturing method of the semiconductor device.
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