| 摘要 |
PROBLEM TO BE SOLVED: To simplify a pattern transfer processing in a method for forming a resist pattern. SOLUTION: In a photo mask MS, first and second patterns A and B are formed respectively in first and second section regions XL and XR that a one- shot region with a length X of one side is halved (X/2) in a step direction STP of a board to be processed. In a resist layer RS on a board SB, after the first pattern B is transferred to the left half of a region 1 to be transferred, the board SB is stepped by a half of a pitch P of a step, corresponding to the length X and the first and second patterns A and B are respectively transferred to the left half and right half of the region 1. Each time after the patterns A and B are transferred, the board SB is stepped by a half pitch P of a step and the patterns A and B are transferred in the same manner. In addition, parallel pattern formation, additional alignment, etc., can be realized by the combination of the patterns A and B.
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