发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: A semiconductor device is provided to enable a flip chip connection without an under fill and to form an interconnection of a high precision, by forming the interconnection on a desired insulation layer so that the width of the interconnection in an inclined part becomes thick. CONSTITUTION: The insulation layer is formed on the semiconductor device(13). An external connection terminal is formed on the insulation layer. The interconnection electrically connects a circuit electrode of the semiconductor device with the external connection terminal, formed on the insulation layer. The shape of a power interconnection or ground interconnection in the inclined part of the insulation layer is different from that of a signal interconnection.
申请公布号 KR20010051328(A) 申请公布日期 2001.06.25
申请号 KR20000063933 申请日期 2000.10.30
申请人 HITACHI, LTD. 发明人 ANJO ICHIRO;DENMEI HIROYUKI;GANDA NAOYA;HOUZOUZI HIROSHI;INOUE KOSUKE;MINAGAWA MATOKA;NISHIMURA ASAO;OOROKU NORIYUKI;TSUNODA SHIGEHARU;UZIIE GENJI;YAJIMA AKIRA;YAMAGUCHI YOSHIHIDE
分类号 H01L21/60;H01L21/56;H01L23/29;H01L23/31 主分类号 H01L21/60
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