发明名称 SUBSTRATE WITH AT LEAST TWO METAL STRUCTURES DISPOSED THEREON, AND METHOD FOR FABRICATING IT
摘要 <p>PURPOSE: A substrate with at least two metal structures disposed thereon, and a method for fabricating it are provided, in which the metal structures are fabricated by using a damascene process and form a small capacitance. CONSTITUTION: A substrate with at least two metal structures disposed thereon includes a substrate(1), a first insulating layer(I1) disposed on the substrate(1) and having cavities formed therein, a second insulating layer(I2) having an upper horizontal surface, composed of a different material than the first insulating layer, and disposed on the first insulating layer, the cavities formed in the first insulating layer being covered by the second insulating layer and bounded toward the substrate by part of the first insulating layer, and at least two metal structures disposed spaced apart from one another in the first insulating layer and each having an upper horizontal surface lying level with the upper horizontal surface of the second insulating layer, and the cavities disposed such that they do not adjoin the metal structures and at least one of the cavities disposed between the at least two metal structures.</p>
申请公布号 KR20010052018(A) 申请公布日期 2001.06.25
申请号 KR20000071542 申请日期 2000.11.29
申请人 INFINEON TECHNOLOGIES AG 发明人 GABRIC ZVONIMIR;PAMLER WERNER;SCHWARZL SIEGFRIED
分类号 H01L21/302;H01L21/304;H01L21/3065;H01L21/768;H01L23/522;H05K1/02;(IPC1-7):H05K1/02 主分类号 H01L21/302
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