| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability at high output, related to a semiconductor laser device of 0.9-1.2μm wavelength. SOLUTION: On an n-GaAs substrate 11, there are formed an n-Alz1Ga1-z1As 12, an Inx2Ga1-x2As1-y2Py2 optical waveguide layer 13, Inx3Ga1-x3As1-y3Py3 quantum well active layer 14, Inx2Ga1-x2As1-y2Py2 optical waveguide layer 15, p-GaAs first etching block layer 16, p-Inx4Ga1-x4P second etching block layer 17, p-Inx6 Ga1-x6As1-y6Py6 layer 18, n-Alz2Ga1-z2As current constriction layer 19, n-GaAs cap layer 20, and SiO2 film 21 are formed. The SiO2 film 21 of a striped region of a width about 3μm is removed, and the GaAs cap layer 20, n-Alz2Ga1-z2As the current constriction layer 19, p-Inx6Ga1-x6As1-y6Py6 layer 18, and p-Inx4Ga1-x4P second etching block layer 17 are etched, so that the p-GaAs first etching block layer 16 is exposed. The SiO2 film 21 is removed, and a p-Alz4Ga1-z4As clad layer 22 and a p-GaAs contact layer 23 are formed.
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